Method for profiling wafers and for locating dies thereon

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364194, 364559, 364560, G06F 1520, G01B 700

Patent

active

049146017

ABSTRACT:
A new and improved method for profiling wafers, and for uniquely identifying the dies formed thereon, wherein the method includes the step of locating a set of reference points along the periphery of the wafer, relative to a predetermined coordinate system. Next, the equation of a hypothetical circle which substantially contours the periphery of the wafer, and which passes through the reference points, is defined. The coordinates of the center of the hypothetical circle, as well as the coordinates of an arbitrary reference die on the wafer, are then derived from the equation of the hypothetical circle. Subsequently, the entire surface of the wafer is mapped relative to the center or to the reference die, by utilizing predetermined stepping dimensions.

REFERENCES:
patent: 4473750 (1984-09-01), Oshida et al.
patent: 4707610 (1987-11-01), Lindow et al.
patent: 4732485 (1988-03-01), Morita et al.
patent: 4748335 (1988-05-01), Lindow et al.
patent: 4750141 (1988-06-01), Judell et al.

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