Structure for microelectronic device incorporating low resistivi

Details Structure for microelectronic device incorporating low resistivi Structure for microelectronic device incorporating low resistivi

1994-11-18

1995-12-12

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257757, 257764, 257767, 257770, 257774, 257635, H01L 2348

Patent

active

054752663

ABSTRACT:
A microelectronic device (10) provides decreased use of bar area to form contacts between a conductive strap (24) or interconnect and subsequent levels. The conductive strap comprises a conducting layer (130) and an overlying semiconducting layer (132). Connection to subsequent levels is made generally overlying substrate conductive areas such as a gate (14) and/or a moat (16). Connection to conductive sublayer (130) is accomplished by doping an overlying semiconductor sublayer (132). Any counter-doping of substrate conductive areas is blocked by an overlying well of dopant-masking (33) or sufficiently thick semiconducting (32) material.

REFERENCES:
patent: 4866009 (1989-09-01), Matsuda
patent: 4874719 (1989-10-01), Kurosawa
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5079617 (1992-01-01), Yoneda

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