Vertical contact structure

Details Vertical contact structure Vertical contact structure

1989-04-06

1990-04-03

James, Andrew J.

357 71, 357 59, 357 65, H01L 2348

Patent

active

049145010

ABSTRACT:
A compact vertical contact has lateral space requirements in the fabrication of semiconductor devices and is compatible with highly planarized processes. The contact is made from a foundation region having a top surface to an overlying layer separated from the foundation region by a dielectric. The overlying layer may be contacted at an edge rather than on its top surface in order to reduce the lateral expanse of the contact.

REFERENCES:
patent: 4374700 (1983-02-01), Scott et al.
patent: 4507171 (1985-03-01), Bhatia et al.
patent: 4619037 (1986-10-01), Taguchi et al.

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