Method of fabricating capacitor or contact for semiconductor dev

Fishing – trapping – and vermin destroying

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437245, 437919, 437977, H01L 21473

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054749492

ABSTRACT:
A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

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