Method of making semiconductor device having polysilicon resista

Details Method of making semiconductor device having polysilicon resista Method of making semiconductor device having polysilicon resista

1992-12-18

1995-12-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 52, 437193, 437195, 437918, 148DIG136, 257379, 257380, 257381, 257903, 257904, H01L 2170

Patent

active

054749484

ABSTRACT:
A polysilicon resistor element and a semiconductor device using the same are disclosed. The polysilicon resistor element has a resistive polysilicon film formed on a predetermined interlayer insulating film of a semiconductor chip. The resistive polysilicon film is covered by an insulating film having holes and high melting point metal films are formed in self-alignment to the holes. The high melting metal film constitutes one of lead portions of the polysilicon resistor element. A diffusion of the high melting point metal film due to heat treatment during fabrication, which causes an effective length of the resistor element, becomes negligible and reproducibility is improved.

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