Method and equipment for manufacturing a semiconductor device

Fishing – trapping – and vermin destroying

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437235, 437238, 437228, H01L 2144

Patent

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054928648

ABSTRACT:
An object of the present invention is to realize a method of and equipment for manufacturing a semiconductor device which can improve the flatness of an interlayer insulating film and increase the reliability of the metal wiring of a second layer to be formed in a succeeding process. The method of manufacturing the semiconductor device of the present invention is characterized by a manufacturing process to be successively implemented comprising: a step for forming an insulating film by means of a chemical vapor deposition method on a semiconductor substrate having an electrode patterned thereon; a step for selectively removing the insulating film by using a reactive ion etching method and forming a side wall made of the insulating film on the patterned electrode; and a step for forming the insulating film by means of the chemical vapor deposition method while introducing excited halogen molecules at an excited molecule oscillation level.

REFERENCES:
patent: 5204288 (1993-04-01), Marks et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5352630 (1994-10-01), Kim et al.
Semicon News, dated Jun. 1989, pp. 62-67.

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