Method of producing MOS devices

Details Method of producing MOS devices Method of producing MOS devices

1994-01-13

1996-02-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437233247, 148DIG3, H01L 218232

Patent

active

054928451

ABSTRACT:
In a method of manufacturing a MOS device, of the type wherein an electrode film is deposited on a gate oxide film, after which a plurality of heat-treating steps are carried out in ambient gases and at a temperature range between 800.degree. and 110.degree. C., at least one of the heat-treating steps is carried out in a hydrogen atmosphere. The resultant MOS device has improved a time-dependent dielectric breakdown characteristics and maintained an improved time-zero dielectric breakdown characteristics which is comparable to that provided by the conventional hydrogen annealing.

REFERENCES:
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4210473 (1980-07-01), Takagi et al.
patent: 4464824 (1984-08-01), Dickman et al.
patent: 5299311 (1993-07-01), Lai et al.

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