Ohmic connection electrodes for p-type semiconductor diamonds

Details Ohmic connection electrodes for p-type semiconductor diamonds Ohmic connection electrodes for p-type semiconductor diamonds

1992-02-07

1993-05-11

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257607, 257742, 257761, 257765, 257766, 257769, 257777, H01L 2348, H01L 2340

Patent

active

052104311

ABSTRACT:
In an ohmic contact electrode for the p-type semiconductor diamond, the electrode is formed of metals or metallic compounds containing boron on a p-type semiconductor diamond, so as to obtain a decreased contact resistance.

REFERENCES:
patent: 2829993 (1958-04-01), Myer et al.
Sze, S. M. Physics of Semiconductor Devices, 2nd ed., John Wiley, 1981, pp. 304-306.
K. L. Moazed et al, "Ohmic Contacts to Semiconducting Diamond" IEEE Electron Device Letters, Jul. 1988, No. 7 New York, NY, pp. 350-351.

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