Method for the production of silicon oxynitride film where the n

Details Method for the production of silicon oxynitride film where the n Method for the production of silicon oxynitride film where the n

1991-08-28

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437239, 437242, 148DIG114, H01L 2102

Patent

active

052545067

ABSTRACT:
A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T N.sup./225 seconds or shorter wherein T.sub.N is in the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.

REFERENCES:
patent: 5198392 (1993-03-01), Fukuda et al.
T. Hori et al., "Charge-Trappping Properties of Ultrathin Nitrided Oxides Prepared by Rapid Thermal Annealing," I.E.E.E. Transactions on Electron Devices, vol. 35, No. 7, pp. 904-910 (Jul. 1988).
D. Henscheid, et al., "Dielectric Formation by Rapid Thermal Nitridation," Extended Abstracts, vol. 88-2, pp. 433-434 (Oct. 9-14, 1988).
Hori et al., (5) "Improvement of Dielectric Stregth of . . . Nitrided Oxides," VLSI Symp. Tech. Dig. pp. 63-64 1987.
Henscheid et al. (6), "RTN of Thin SiO.sub.2 Films", Journal of Electronic Materials, vol. 18, pp. 99-104, No. 2, 1989.
Vasquez & Madhukar, "A Kinetic Model for the Thermal Nitridation of SiO.sub.2 /Si", J. Appl. Phys. 60(1), Jul. 1, 1986, pp. 234-242.
Moslehi & Saraswat, "Thermal Nitridation of Si and SiO.sub.2 for VLSI", IEEE Trans. Elec. Dev., vol. ED-32, No. 2, Feb. 2, 1985, pp. 106-113.
"Improvement of Dielectric Integrity of TiSi.sub.x -Polycide-Gate System by Using Rapidly Nitrided Oxides", J. Electrochem Soc., vol. 136, No. 10 (Oct. 1985).
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