Process for forming metal deposited film containing aluminum as

Details Process for forming metal deposited film containing aluminum as Process for forming metal deposited film containing aluminum as

1992-06-15

1993-03-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437194, 437195, 437246, 156DIG104, H01L 21285

Patent

active

051963728

ABSTRACT:
A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.

REFERENCES:
R. A. Levy et al., "Characterization of LPCVD Aluminum for VLSI Processing", Journal of the Electrochemical Society, vol. 131, No. 9, pp. 2175-2182, Sep. 1984.
R. Bhat et al., "The Growth and Characterization of AlGaAs Using Dimethyl Aluminum Hydride", Journal of Crystal Growth, vol. 77, pp. 7-10 (1986).
M. Hanabusa et al., "Photochemical Vapor Deposition of Aluminum Thin Films Using Dimethylaluminum Hydride", Japanese Journal of Applied Physics, vol. 27, No. 8, pp. L1392-L1394, Aug. 1988.
A. Sekiguchi et al., "Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing", Japanese Journal of Applied Physics, vol. 27, No. 11, pp. L2134-L2136, Nov. 1988.
H. O. Pierson, "Aluminum Coatings by the Decomposition of Alkyls", Thin Solid Films, vol. 45, pp. 257-263, 1977.
T. Cacouris et al., "Laser direct writing of aluminum conductors", Applied Physics Letters, vol. 52, No. 22, pp. 1865-1867, May 30, 1988.
C. Sasaoka et al., "Aluminum selective area deposition on Si using dimethylaluminumchloride", Applied Physics Letters, vol. 55, No. 8, pp. 741-743, Aug. 21, 1989.

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