Method of producing a light emitting diode array device

Fishing – trapping – and vermin destroying

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437127, 437905, 437906, 148DIG99, H01L 2120

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active

051963698

ABSTRACT:
A method of fabricating light emitting diode array devices is provided, said method comprising the steps of layering through crystal growth the second semiconductor layer with an impurity serving as the diffusion source on the first semiconductor layer, removing by etching the area of said second semiconductor layer other than the island-like area at the location corresponding to the location where light emitting diodes are to be formed, and diffusing said impurity on said first semiconductor layer from said island-like area as the diffusion source. According to this method, such complicated process as gaseous phase diffusion, depositing ZnO film as the diffusion source, etc. may be eliminated.

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patent: 4404730 (1983-09-01), Heimen
patent: 4755485 (1988-07-01), Tsai
A. Shima, et al.; Extended Abstract of the 21st Conference on Solid State Devices and Materials; Tokyo, 1989, pp. 345-348.

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