Method of manufacturing a semiconductor device having a polycrys

Details Method of manufacturing a semiconductor device having a polycrys Method of manufacturing a semiconductor device having a polycrys

1984-06-26

1986-04-29

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

427 85, 427 86, 427 93, 29576R, H01L 21283

Patent

active

045847606

ABSTRACT:
A semiconductor device is disclosed which includes an electrode or wiring layer having a polycrystalline silicon layer formed on an insulating film and a metal silicide layer formed thereon for reduction in electrical resistance. In order to prevent the metal silicide layer from diffusing into the polycrystalline silicon layer to finally reach the interface with the insulating film through various high-temperature heat treatment processes, the impurity concentration of the polycrystalline silicon layer is made different in the depthwise direction such that the concentration is higher at the lower part in contiguous with the insulating film than the upper part. With this structure, the diffusion of the metal silicide going to approach the insulating film is blocked by the presence of the lower part of high impurity concentration.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4143178 (1979-03-01), Harada et al.
patent: 4146906 (1979-03-01), Miyata et al.
patent: 4229502 (1980-10-01), Wu et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4373251 (1983-02-01), Wilting
patent: 4471524 (1984-09-01), Kinsblon et al.
patent: 4516147 (1985-05-01), Komatsu et al.
patent: 4541002 (1985-09-01), Shimada

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