Method of forming a dielectric layer on a semiconductor device

Details Method of forming a dielectric layer on a semiconductor device Method of forming a dielectric layer on a semiconductor device

1984-12-12

1986-10-28

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 89, 427 93, 427240, H01L 21316

Patent

active

046198393

ABSTRACT:
A method for forming a substantially planar inorganic dielectric layer over a predetermined pattern of electrical interconnects comprises the steps of reacting phosphoric acid and a trivalent metallic halide compound with an aliphatic solvent to form a coating fluid. The coating fluid is then spun onto the semiconductor device to form a layer over the electrical interconnect. The resultant device is then baked at a first temperature to drive off the solvent and then baked at a second, higher temperature, in order to promote the glass forming reaction. This process is repeated as required to form a coating layer having a thickness which exhibits levelling characteristics of such high quality that fine topography can be carried out on succeeding layers of metal in order to form additional interconnect layers with precision.

REFERENCES:
patent: 4243427 (1981-01-01), DiBugnara
patent: 4277525 (1981-07-01), Nakayama
patent: 4385086 (1983-05-01), Nakayama
Rothon and Ashley, "Ultraviolet Absorbing Low Permeability, Iron III Phosphate Coatings", Chemistry and Industry, Nov. 1975, pp. 976-978.
Rothon, "Solution-Deposited Metal Phosphate Coatings", Thin Solid Films, vol. 77, 1981, pp. 149-153.

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