Method of making semiconductor laser devices

Details Method of making semiconductor laser devices Method of making semiconductor laser devices

1990-06-29

1992-09-08

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437133, 148DIG95, H01L 2118

Patent

active

051458071

ABSTRACT:
Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is elminated, and the time constant is decreased by decreasing the inter-electrode capacity.

REFERENCES:
patent: 4503540 (1985-05-01), Nakashima et al.
patent: 4648940 (1991-03-01), Menigaux et al.
patent: 4663761 (1987-05-01), Barnard et al.
patent: 4756792 (1988-07-01), Fujita et al.
patent: 4808551 (1989-02-01), Mori et al.
patent: 4864581 (1989-09-01), Nelson et al.
patent: 4891093 (1990-01-01), Smith
patent: 4935381 (1990-06-01), Speckman et al.

Affiliated with

Also associated with

Rating

Method of making semiconductor laser devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor laser devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor laser devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-134074