Selective titanium silicide formation

Details Selective titanium silicide formation Selective titanium silicide formation

1985-08-15

1986-10-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29591, 148DIG147, 427 93, 427 99, 4271261, 4272552, H01L 21441

Patent

active

046190384

ABSTRACT:
A process for selective formation of a titanium silicide, TiSi.sub.2, layer at high temperatures and low pressures via chemical vapor deposition during semiconductor device manufacturing. At 700.degree. to 1000.degree. C. and 0.5 to 1.5 torr, TiSi.sub.2 deposits only on exposed silicon or polysilicon surfaces and not at all on neighboring silicon dioxide. The process provides an excellent means of providing low resistivity interconnects without a mask step or subsequent annealing and removal of unreacted titanium.

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M. E. Alperin, et al., "Development of the Self-Aligned Titanium Silicide Process for VLSI Applications," IEEE Journal of Solid-State Circuits, vol. SC-20, No. 1, Feb. 1985, pp. 61-69.
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Iyer et al., "New Salicide Spacer Technology," IBM Technical Disclosure Bulletin, vol. 27, No. 3, Aug. 1984.

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