Single-polysilicon dram device and process

Details Single-polysilicon dram device and process Single-polysilicon dram device and process

1986-12-05

1990-01-16

Hille, Rolf

357 42, 357 59, 357 67, H01L 2978, H01L 2702, H01L 2904, H01L 2348

Patent

active

048946931

ABSTRACT:
A new DRAM structure, wherein the top plate of the storage capacitor is provided by a TiN thin film layer 410', and the bottom plate is provided by a polysilicon layer 402' which also provides the gates 402 of the pass transistors.

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