Method of fabricating polysilicon electrodes

Details Method of fabricating polysilicon electrodes Method of fabricating polysilicon electrodes

1980-12-22

1982-09-07

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29589, 29590, 156653, 156657, 357 24, 357 59, 427 86, 427 89, 427 93, H01L 21285, H01L 21308

Patent

active

043476562

ABSTRACT:
A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase or four-phase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair.

REFERENCES:
patent: 3576478 (1971-04-01), Watkins et al.
patent: 3633078 (1972-01-01), Dill et al.
patent: 3646665 (1972-03-01), Kim
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3654499 (1972-04-01), Smith
patent: 3700932 (1972-10-01), Kahng
patent: 3770988 (1973-11-01), Engeler et al.
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3921194 (1975-11-01), Engeler et al.
patent: 4032948 (1977-06-01), Engeler et al.
Faggin et al., "Silicon Gate Technology", Solid-State Electronics, vol. 13, Aug. 1970, pp. 1125-1144.

Affiliated with

Also associated with

Rating

Method of fabricating polysilicon electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating polysilicon electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating polysilicon electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1336593