Methods of forming insulative plugs, and oxide plug forming meth

Details Methods of forming insulative plugs, and oxide plug forming meth Methods of forming insulative plugs, and oxide plug forming meth

1998-09-03

2000-07-25

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438753, 438756, H01L 2100

Patent

active

060936525

ABSTRACT:
In one aspect, the invention includes a method of forming an insulative plug within a substrate, comprising: a) forming a masking layer over the substrate, the masking layer having an opening extending therethrough to expose a portion of the underlying substrate; b) etching the exposed portion of the underlying substrate to form an opening extending into the substrate; c) forming an insulative material within the opening in the substrate, the insulative material within the opening forming an insulative plug within the substrate; d) after forming the insulative material within the opening, removing the masking layer; and e) after removing the masking layer, removing a portion of the substrate to lower an upper surface of the substrate relative to the insulative plug.

REFERENCES:
patent: 5244534 (1993-09-01), Yu et al.
patent: 5272117 (1993-12-01), Roth et al.
patent: 5858858 (1999-01-01), Park et al.

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