Two step vapor-phase epitaxial growth process for control of aut

Details Two step vapor-phase epitaxial growth process for control of aut Two step vapor-phase epitaxial growth process for control of aut

1988-12-15

1990-01-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG7, 148DIG25, 148DIG169, 156693, 437 81, 437111, 437112, H01L 2120

Patent

active

048943495

ABSTRACT:
A process for forming a vapor-phase epitaxial growth layer on a silicon wafer having a buried layer of a high As or B concentration. This vapor-phase epitaxial growth process is performed in two steps of (i) performing a vapor-phase epitaxial growth at a relatively low temperature by using a reaction gas containing at least one kind selected from a group consisting of SiH.sub.x F.sub.4-x (x=0 to 3) and Si.sub.2 H.sub.x F.sub.6-x (x=0-5) and at least one kind selected from a group consisting of SiH.sub.4 and Si.sub.2 H.sub.6, and (ii) performing a vapor-phase epitaxial growth under a condition which allows a higher growth rate that in the step (i) by using a reaction gas containing SiH.sub.4 or Si.sub.2 H.sub.6 which may or may not be accompanied with silane fluoride.

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