Flash memory cell having antimony drain for reduced drain voltag

Details Flash memory cell having antimony drain for reduced drain voltag Flash memory cell having antimony drain for reduced drain voltag

1993-07-08

1994-09-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257316, 257408, H01L 29167, H01L 2968

Patent

active

053451040

ABSTRACT:
An improved ETOX-type flash memory cell which requires only a single 5-volt power supply for read, write and erase functions. By substituting antimony or the combination of antimony and arsenic for the usual arsenic drain dopant, drain junction depth is reduced, due to the low diffusivity of antimony during high-temperature cycling. In order to maximize the concentration of antimony in the drain region, which is limited to approximately 3.times.10.sup.19 atoms/cm.sup.3 (due to solid solubility characteristics of antimony at standard silicon process activation temperatures in the 800.degree.-1,000.degree. C. range), an antimony implant concentration of approximately 1.times.10.sup.15 atoms/cm.sup.2 is employed. The resulting shallow junction raises the electric field strength at the cell's drain junction, thus increasing the hot electron generation rate and improving the programming efficiency. The decreased junction depth also acts to improve short channel effects such as punch-through and drain-to-gate capacitive coupling. The addition of a boron halo implant to obtain a traditional doubly diffused drain further enhances programming efficiency.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4875085 (1989-10-01), Ueno et al.
Richard D. Pashley & Stefan K. Lai, "Flash Memories: The Best of Two Worlds", Dec., 1989 (Entire Document).

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