Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Patent
1993-07-30
1994-09-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
257150, 257688, 257698, H01L 2342, H01L 2344, H01L 2974
Patent
active
053450965
ABSTRACT:
In a turn-off high-power semiconductor component, in particular in the form of a GTO, comprising a disk-shaped semiconductor substrate (2) which is disposed concentrically in an annular insulating housing (10) between a disk-shaped cathode contact (4), to which pressure can be applied, and a disk-shaped anode contact (5), to which pressure can also be applied, and which is contacted on the cathode-contact side by a gate contact (7, 21), the cathode contact (4) being connected to one end of the insulating housing (10) via a first lid (11a) and the anode contact (5) to the other end of the insulating housing (10) via a second lid (11b), an outwardly hermetically sealed component (1) being formed, and the gate contact (7) being capable of being fed with a gate current via a gate lead (8) brought to the outside, a connection to the gate unit is achieved with low mutual inductance with a minimum of alterations compared with conventional components as a result of the gate lead (8) being of rotationally symmetrical design and being disposed concentrically with respect to the cathode contact (4) and of the gate lead (8) being electrically isolated from the cathode contact (4) by a single insulator.
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ABB Research Ltd.
Hardy David B.
Hille Rolf
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