Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-08-20
1999-07-20
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438254, 438397, H01L 2120
Patent
active
059267186
ABSTRACT:
A method for forming a capacitor (36) outwardly from a semiconductor substrate (10). Alternating layers of first and second materials (20 and 22) are formed outwardly from a semiconductor substrate. A first set of vias (24) is formed through the layers of first and second materials (20 and 22) to the semiconductor substrate(10). A second set of vias (26) is formed through the layers of first and second materials (20 and 22). Each via in the second set (26) is formed in a location that is adjacent to one of the vias of the first set (24). A trunk (28) of the first plate (34) of the capacitor (36) is formed by selectively depositing a semiconductor material, such as poly-silicon, to fill the first set of vias (24). A set of fins (30) and a dome (32) are formed on the trunk (28) to complete the first plate (34) by removing the alternating layers of first layers (20) and selectively depositing a semiconductor material between the second layers (22). The dome (32) comprises a layer of semiconductor material that is formed outwardly from the outermost layer of second material (22) with a surface area that is greater than the planar projection of the layer. The capacitor (34) is completed by removing the alternating layers of second material (22), conformally depositing a dielectric material (38) outwardly from the first plate, and forming a second plate (40) for the capacitor (34) outwardly from the dielectric layer (38).
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Micro)n Technology, Inc.
Nguyen Tuan H.
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