Semiconductor component with scattering centers within a lateral

Details Semiconductor component with scattering centers within a lateral Semiconductor component with scattering centers within a lateral

1997-09-30

2000-03-28

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257107, 257173, 257148, 257154, 257162, 257157, 257536, 257617, H01L 2974, H01L 2904, H01L 2930

Patent

active

06043516&

ABSTRACT:
A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the surface of the semi-conductor component and it has a defined dopant concentration. Scattering centers are provided in the region of the lateral resistor which reduce a temperature dependency of the lateral resistor.

REFERENCES:
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patent: 4210464 (1980-07-01), Tanaka et al.
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patent: 5243205 (1993-09-01), Kitagawa et al.
patent: 5587594 (1996-12-01), Jacklin et al.
"Advanced Light Triggered Thyristors for Electric Power Systems" (Temple), EE Int. Conference Thyristor and Variable Static Equipment for AC and DC Transmission, Nov. 30, 1981, pp. 86-91.

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