Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Patent
1997-04-03
1999-07-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
257691, 257698, 257700, 257773, H01L 23552, H01L 2352, H01L 2304
Patent
active
059259256
ABSTRACT:
The invention applies to packages for transmitting signals at very high frequencies. A package (10) for the integrated circuit (11) comprises conductors disposed on at least two levels (N1-N6) and distributed so that two pairs of conductors of two fixed potentials (18d, 18g; 19d, 19g), along with a conductor (18s) for single-pole transmission of a signal, form a three-dimensional structure which is approximately coaxial having a characteristic impedance which is substantially constant and predetermined.
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patent: 5296735 (1994-03-01), Fukunaga
patent: 5331514 (1994-07-01), Kuroda
patent: 5338970 (1994-08-01), Boyle et al.
IBM Technical Disclosure Bulletin, vol. 33, No. 12, May 1991, NY, US, pp. 128-130, XP002020796 Anonymous: "Anisotropic Wiring Cross-Section", Fig. 1.
Patent Abstract of Japan, vol. 95, No. 008& JP A 07 221215 (Fujitsu Ltd), Aug. 18, 1995, Abstract.
Dehaine Gerard
Marbot Roland
Moreau Michel
Stricot Yves
Bull S.A.
Kondracki Edward J.
Ngo Ngan V.
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