Method of evaluating and thermally processing semiconductor wafe

Details Method of evaluating and thermally processing semiconductor wafe Method of evaluating and thermally processing semiconductor wafe

1997-03-18

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Including control responsive to sensed condition

H01L 2100

Patent

active

059856785

ABSTRACT:
In a method of evaluating a semiconductor wafer to provide an index as to whether slip generation is likely or not, the in-plane temperature distribution of the wafer is varied at a prescribed temperature and the condition of the temperature distribution at which slip line generation occurs is detected. The temperature distribution is varied using plural concentric heaters and is measured using a radiation thermometer. The temperature distribution is correlated to thermal stress in the wafer. In this manner, a range of tolerable thermal stress is specified, at which a slip line will not be generated.

REFERENCES:
patent: 5390228 (1995-02-01), Niibe et al.
patent: 5436172 (1995-07-01), Moslehi
patent: 5497381 (1996-03-01), O'Donoghue et al.
Mokuya et al. "Characteristics of the transient wafer temperature distribution in a furnace for semiconductor fabrication process" Electronics and Communications in Japan (Part 2) Dec. 1987. vol. 70. No. 12. pp. 59-65.

Affiliated with

Also associated with

Rating

Method of evaluating and thermally processing semiconductor wafe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of evaluating and thermally processing semiconductor wafe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of evaluating and thermally processing semiconductor wafe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1323782