Process for forming photosensor from SI(X) precursor and activat

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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430 84, 430 65, H01J 4014

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active

047437502

ABSTRACT:
A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

REFERENCES:
patent: 4307372 (1981-12-01), Matsui et al.
patent: 4361638 (1982-11-01), Higashi et al.
patent: 4365015 (1982-12-01), Kitajima et al.
patent: 4394426 (1983-07-01), Shimizu et al.
patent: 4439463 (1984-03-01), Miller
patent: 4450185 (1984-05-01), Shimizu et al.
patent: 4532199 (1985-07-01), Ueno, et al.
patent: 4546243 (1985-10-01), Hamano et al.
patent: 4592983 (1986-06-01), Saitoh et al.
patent: 4600801 (1986-07-01), Guha et al.
patent: 4634648 (1987-01-01), Jansen et al.
patent: 4664937 (1987-05-01), Ovshinsky, et al.

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