Magnetic sensor

Details Magnetic sensor Magnetic sensor

1997-02-13

1999-11-16

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694R, 428694T, 428694TM, 428684TS, 428900, 360113, 324252, G11B 566

Patent

active

059854715

ABSTRACT:
The magnetic sensor comprise a multi-layer structure 10 including a ferromagnetic layer 12 of FeCo alloy, an insulation layer 14 of Al.sub.2 O.sub.3 and a compound semiconductor layer 16 of GaAs. Circularly polarized light is irradiated to the compound semiconductor layer 16 to generate electrons. A dc voltage is applied to the ferromagnetic layer 12 and the compound semiconductor layer 16 by a dc power source 20 while circularly polarized light is irradiated to the compound semiconductor layer 16. When a direction of an external magnetic field changes, a magnetization direction of the ferromagnetic layer 12 accordingly changes, and a magnetoresistance between the ferromagnetic layer 12 and the compound semiconductor layer 16 changes. Changes of the magnetoresistance are measured by a voltmeter 22.

REFERENCES:
patent: 3840865 (1974-10-01), Holtzberg
patent: 3872035 (1975-03-01), Holtzberg
patent: 5549978 (1996-08-01), Iwasaki

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