Two step rapid thermal anneal of implanted compound semiconducto

Details Two step rapid thermal anneal of implanted compound semiconducto Two step rapid thermal anneal of implanted compound semiconducto

1987-04-20

1988-05-10

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG4, 148DIG94, 437 22, 437942, H01L 21265

Patent

active

047435690

ABSTRACT:
A two step rapid thermal anneal (RTA) has been studied for activating Be implanted GaAs, where a short duration high temperature step is used to electrically activate the Be followed by a longer low temperature anneal for lattice re-growth. PN diodes show a substantial reduction in reverse diode leakage current after the lower temperature second step anneal, when compared to a single step RTA or to furnace annealing (FA). For low energy Be implants, no difference in electrical activation between the single step and the two step anneal is observed. Raman studies demonstrate that residual substrate impurities and high Be concentrations inhibit restoration of single crystal lattice characteristics after RTA. Lattice quality is also shown not to limit diode characteristics in the RTA material.

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