Process of controlling surface doping

Details Process of controlling surface doping Process of controlling surface doping

1987-05-26

1988-05-10

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG82, 437 20, 437 27, 437 34, 437 69, 437 70, H01L 21265, H01L 2122, H01L 1700

Patent

active

047435631

ABSTRACT:
A process is disclosed for controlling the surface doping of two regions of a semiconductor device and more specifically for using such control to achieve the necessary field doping in a CMOS device structure. In accordance with one embodiment of the invention a silicon substrate is provided which has first and second regions of opposite conductivity type. A uniform doping such as by ion implantation is provided into each of the conductivity regions. The two regions or portions thereof are then simultaneously differently oxidized to cause a differential segregation of the dopant into the thermally grown oxide. The differential oxide growth can be achieved by selectively implanting halogen ions into the wafer surface prior to the thermal oxidation.

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