Dry etching method

Details Dry etching method Dry etching method

1997-04-25

1999-03-09

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438721, 438738, H01L 21302

Patent

active

058800352

ABSTRACT:
An object of this invention is to provide a dry etching method enabling a higher productivity and a higher yield without giving any bad effect to a substrate (such as, for instance, damages to a gate oxide film bed) even in a case where a side wall protection film is formed and then the side wall protection film must be removed later.
This invention is a dry etching method for processing a polycide layer, in which a poly Si layer and a refractory metal silicide layer are formed in this order on an oxide film bed, by etching resist patterns selectively formed on said polycide layer into a mask, wherein the undercut 6 is provided in the refractory metal silicide layer 2 or other layers contacting the resist pattern 1 and then the refractory metal silicide layer 2 and the poly Si layer 3 are isotropically etched.

REFERENCES:
patent: 4460435 (1984-07-01), Maa
patent: 5118387 (1992-06-01), Kadomura
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5160408 (1992-11-01), Long
patent: 5354417 (1994-10-01), Cheung et al.
patent: 5416037 (1995-05-01), Sato et al.
patent: 5431770 (1995-07-01), Lee et al.
patent: 5491100 (1996-02-01), Lee et al.

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