Thin-film transistor structure for liquid crystal display

Details Thin-film transistor structure for liquid crystal display Thin-film transistor structure for liquid crystal display

1997-01-17

1999-03-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438151, 257 59, 349 44, H01L 2184

Patent

active

058799591

ABSTRACT:
A thin-film transistor structure having a storage-capacitor-on-gate and a black matrix for manufacturing a liquid crystal display is disclosed. A metal layer is deposited and patterned as a black matrix on a glass substrate of the thin-film transistor plate. An insulating layer having a contact hole for contacting the black matrix is formed over the surface of the black matrix and the substrate. An inverted thin-film transistor having a metal gate on the bottom is then fabricated on top of the insulating layer. The thin-film transistor controls an ITO pixel electrode of the liquid crystal display. A gate line including the metal gate of the thin-film transistor is formed over and above a space between two adjacent black matrixes. The gate line is connected to one of the two black matrixes by the contact hole. The other black matrix serves as a light shield element of the ITO pixel electrode. The technique is also applicable to the manufacturing of a non-inverted thin-film transistor having a metal gate on the top.

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T. Ueda et al., SID '93 Digest, p. 739 "A high aperture ratio TFT-LCD with a shield electrode structure", 1993.

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