Method of forming a contact hole in semiconductor integrated cir

Details Method of forming a contact hole in semiconductor integrated cir Method of forming a contact hole in semiconductor integrated cir

1990-06-15

1991-07-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 70, 437186, 437203, H01L 21265, H01L 21283

Patent

active

050325280

ABSTRACT:
Regions having different impurity concentrations are formed in the main surface region of the semiconductor substrate. Accordingly, when the substrate is oxidized, oxide films having different thickness are formed. More specifically, the oxide film is formed more deeply on the surface region of the substrate having a high impurity concentration in which ions are injected than on the surface region in which no ions are injected. In the etching step, since the thinner oxide film is removed while the thicker oxide film remains, the surface of the region under the thinner oxide film is exposed, and thus a contact hole is formed. If, in the step of forming a contact hole, a portion of the thinner oxide film is covered by a resist pattern, only the regiion of the oxide film which is not masked by the resist pattern is etched and the substrate surface thereunder is exposed, and thus a contact hole is formed.

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