Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-02-14
1995-06-13
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257229, 257294, 257508, 257908, H01L 2714, H01L 2978
Patent
active
054245745
ABSTRACT:
A light shield for a back-side thinned CCD has an aluminum reflective layer over the imaging surface of the CCD with a vanadium barrier layer between the aluminum reflective layer and the imaging surface. An optional oxide layer may be formed between the reflective and barrier layers.
REFERENCES:
patent: 3864722 (1975-02-01), Carnes
patent: 4040092 (1977-08-01), Carnes
patent: 4176369 (1979-11-01), Nelson et al.
patent: 4213137 (1980-07-01), Pines
patent: 4313127 (1982-01-01), Su et al.
patent: 4481522 (1984-11-01), Jastrzebski et al.
patent: 4663535 (1987-05-01), Nakai et al.
patent: 4760031 (1988-07-01), Janesick
patent: 4774557 (1988-09-01), Kosonocky
patent: 4916543 (1990-04-01), Crosby
patent: 4941029 (1990-07-01), Bluzer
patent: 5084749 (1992-01-01), Losee et al.
patent: 5221854 (1993-06-01), Banerjee et al.
Saadat Mahshid D.
Scientific Imaging Technologies, Inc.
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