Light shield for a back-side thinned CCD

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257229, 257294, 257508, 257908, H01L 2714, H01L 2978

Patent

active

054245745

ABSTRACT:
A light shield for a back-side thinned CCD has an aluminum reflective layer over the imaging surface of the CCD with a vanadium barrier layer between the aluminum reflective layer and the imaging surface. An optional oxide layer may be formed between the reflective and barrier layers.

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