Gate enhanced rectifier

Details Gate enhanced rectifier Gate enhanced rectifier

1990-03-08

1990-11-06

Hille, Rolf

357 233, 357 234, 357 238, 357 43, H01L 2974, H01L 2910, H01L 2968, H01L 2702

Patent

active

049690280

ABSTRACT:
A high power semiconductor rectifier is constructed so that the rectifier is normally off and can be switched on by applying a bias signal to a gate of a metal-insulator-semiconductor structure monolithically integrated with the rectifier in such a manner as to induce a conducting channel between the anode and cathode of the rectifier. The device has both forward and reverse blocking capability and a low forward voltage drop when in the conducting state. The device has a very high turn-off gain and both high dV/dt and di/dt capabilities.

REFERENCES:
patent: 4300152 (1981-11-01), Lepselter
patent: 4324038 (1982-04-01), Chang et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4639758 (1987-01-01), Iizuka
Hofstein, S. R. et al., "The Insulated Gate Tunnel Junction Triode", IEEE Transactions on Electron Devices, pp. 66-76, Feb. 1965.

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