Patent
1988-07-18
1990-11-06
Hille, Rolf
357 34, 357 39, 357 42, 357 43, 357 234, H01L 2974
Patent
active
049690272
ABSTRACT:
A high power bipolar transistor device includes an integral antisaturation Schottky diode resulting from direct contact between the metallic base electrode and the collector region of the transistor. The barrier height of the Schottky diode is chosen so that it turns on at a slightly lower voltage than the collector-base voltage at saturation and diverts excess drive current away from the base to prevent the transistor from becoming fully saturated. The integral Schottky diode may also be used to prevent latch-up in a thyristor device or in a parasitic thyristor which forms part of an insulated gate transistor.
REFERENCES:
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4521795 (1985-06-01), Coe et al.
patent: 4605948 (1986-08-01), Martinelli
patent: 4613887 (1986-09-01), Fukuda et al.
patent: 4631561 (1986-12-01), Foroni et al.
patent: 4641174 (1987-02-01), Baliga
patent: 4739386 (1988-04-01), Tanizawa
patent: 4767722 (1988-08-01), Blanchard
patent: 4823172 (1989-04-01), Mihara
H. Taub et al., Digital Integrated Electronics, McGraw-Hill, Inc., 1987, pp. 49-51.
S. K. Ghandi, Semiconductor Power Devices, J. Wiley & Sons, 1977, pp. 188-243.
B. J. Baliga, Modern Power Devices, J. Wiley & Sons, 1987, pp. 350-14 401.
Baliga Bantval J.
Schlecht Frederick
Davis Jr. James C.
General Electric Company
Hille Rolf
Loke Steven
Snyder Marvin
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