Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1984-08-27
1986-01-28
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307252A, 307318, 307545, 357 13, 357 51, 357 86, 361 56, 361 91, H01L 2974
Patent
active
045675007
ABSTRACT:
Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry inside an integrated circuit from damage due to high voltage transients. The protection circuit comprises a PNPN structure forming a silicon control rectifier (SCR) and a resistive element integral to the SCR structure. In one embodiment the resistive element is a linear resistor and in another embodiment is a non-linear resistor in the form of a diode connected transistor. The SCR and the resistive element are arranged to form a two terminal, high current protection circuit which is rendered conductive when the potential difference across the two terminals is greater than one forward biased PN junction voltage drop. One terminal of the protection circuit is connected to an input or output terminal of the protected circuit, and the other terminal is connected to the most positive power supply potential. Transient voltages appearing at the integrated circuit terminal greater than one PN junction voltage drop above the positive power supply potential causes the protection circuit to conduct current, thereby dissipating the energy of the high voltage transient and protecting the integrated circuit from damage.
REFERENCES:
patent: 3089998 (1963-05-01), Reuther
patent: 3210620 (1965-10-01), Lin
patent: 3213349 (1965-10-01), Gutzwiller
patent: 3401319 (1968-09-01), Watkins
patent: 3509382 (1970-04-01), Zgebura
patent: 3524113 (1970-08-01), Agusta et al.
patent: 3573550 (1971-04-01), Baker
patent: 3638081 (1972-01-01), Lloyd
patent: 3697807 (1972-10-01), Christ
patent: 3787717 (1974-01-01), Fischer et al.
patent: 3872495 (1975-03-01), Geller et al.
patent: 3904931 (1975-09-01), Leidich
patent: 3999207 (1976-12-01), Arai
patent: 4106048 (1978-08-01), Khajezadeh
patent: 4114072 (1978-09-01), Willis
patent: 4178619 (1979-12-01), Seiler et al.
patent: 4258311 (1981-03-01), Tokuda et al.
patent: 4258377 (1981-03-01), Miyata et al.
patent: 4286177 (1981-08-01), Hart et al.
patent: 4377832 (1983-03-01), Toney et al.
"SCR Manual", 1961, pp. 94-95.
Goldthorp et al., "An Integrated Circuit Composite PNPN Diode", IEDM, 1979, pp. 180-183.
J. Iseli, Bull. SEV 63, (1972), 2,22 Jan. "Empfindlichkeit und Schutz Integrierter Shaltkreise Gegen Uberspannungen".
Burke William J.
Clawson Jr. Joseph E.
Morris Birgit E.
RCA Corporation
Steckler Henry
LandOfFree
Semiconductor structure for protecting integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure for protecting integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure for protecting integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1309295