Method for making contact holes in semiconductor devices

Details Method for making contact holes in semiconductor devices Method for making contact holes in semiconductor devices

1992-08-04

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437981, 437947, 437228, H01L 2144

Patent

active

054242479

ABSTRACT:
In a method for making contact holes in a semiconductor device according to the invention, a first insulating film is deposited on a semiconductor chip, a plurality of contact holes are formed by sequentially performing isotropic etching and anisotropic etching, a second insulating film is deposited after the portions of the first insulating film constituting peripheries of the contact holes are subjected to a reflow process, and residue sidewall insulators are formed for the contact holes by keeping portions of the second insulating film only at sidewall portions of the contact holes when the second Insulating film is etched-back by an anisotropic etching process. The structure thus obtained enables to provide the contact holes whose peripheral edges are gently tapered thereby improving the step coverage of the Interconnect wiring material at the contact hole portions. This enables to avoid a possibility for the interconnect wiring layer to be broken, which may otherwise be caused by a poor step coverage of the interconnect wiring layer. The method enhances the production yield in the fabrication of the device and also enhances the reliability of the product.

REFERENCES:
patent: 4363830 (1982-12-01), Hsu et al.
patent: 4489481 (1984-12-01), Jones
patent: 5087591 (1992-02-01), Teng
patent: 5169801 (1992-12-01), Sato
patent: 5342808 (1994-08-01), Brigham et al.

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