Method of forming vias through two-sided substrate

Details Method of forming vias through two-sided substrate Method of forming vias through two-sided substrate

1994-01-04

1995-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

257774, 437209, H01L 2160, H01L 2144

Patent

active

054242452

ABSTRACT:
An integrated circuit substrate (26) is formed with active circuit elements (24, 32) on first and second surfaces of the substrate. The active circuit elements are interconnected with though-substrate vias (28) to minimize signal routing and reduce propagation delay. The through-substrate vias may be formed with a plurality of holes (52) through the IC substrate. A dielectric layer (54) is deposited on the surface of the IC substrate and through the holes. A conductive layer (56) is deposited through the holes to form the through-substrate vias. The dielectric layer is removed from the surface of the IC substrate to leave the through-substrate vias isolated from the IC substrate by the dielectric layer. A second substrate (26) is formed as described and the two substrates are joined as a two-sided chip (21) with active circuit elements on both sides interconnected by through-substrate vias.

REFERENCES:
patent: 3648131 (1972-03-01), Stuby
patent: 4754316 (1988-06-01), Reid
patent: 4761681 (1988-08-01), Reid
patent: 4807021 (1989-02-01), Okumura
patent: 4954875 (1990-09-01), Clements
patent: 5037782 (1991-08-01), Nakamura et al.
patent: 5059553 (1991-10-01), Berndlmaier et al.
patent: 5139969 (1992-08-01), Mori
patent: 5229647 (1993-07-01), Gnadinger
patent: 5366589 (1994-11-01), Chang
IBM Technical Disclosure Bulletin vol. 34, #11, Apr. 1992.
IBM Technical Discl. Bull., S. Magdo, vol. 19, #4, Sep. 1976.

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