Method of making a compound semiconductor crystal-on-substrate s

Details Method of making a compound semiconductor crystal-on-substrate s Method of making a compound semiconductor crystal-on-substrate s

1994-09-09

1995-06-13

Nguyen, Nam

Fishing, trapping, and vermin destroying

437105, 437107, 437133, 437248, 437174, H01L 2120

Patent

active

054242436

ABSTRACT:
A method of producing a compound semiconductor crystal-on-substrate structure includes forming a first compound semiconductor crystal layer made of a group III-V compound semiconductor on a Si substrate, forming a stacked structure by forming an amorphous compound semiconductor layer made of the group III-V compound semiconductor on the first compound semiconductor crystal layer, subjecting the stacked structure to a thermal process, removing at least the amorphous compound semiconductor layer from the stacked structure that is subjected to the thermal process, and forming a second compound semiconductor crystal layer made of the group III-V compound semiconductor, to thereby form the compound semiconductor crystal-on-substrate structure.

REFERENCES:
patent: 5011550 (1991-04-01), Konushi et al.
patent: 5037774 (1991-08-01), Yamawaki et al.
patent: 5168069 (1992-12-01), Smith et al.
patent: 5210052 (1993-05-01), Takasaki

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