Method for manufacturing a non-volatile memory having a floating

Fishing – trapping – and vermin destroying

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437 49, H01L 21265

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active

054242320

ABSTRACT:
A non-volatile memory having a Floating Gate Oxide type field effect transistor provided with a floating gate on a semiconductor substrate through a tunnel oxide film, including an oxide blocking film formed on the side wall of the floating gate for preventing a tunnel insulating film from being thermally oxidized by thermal oxidation.

REFERENCES:
patent: 4775642 (1988-10-01), Chang et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4806201 (1989-02-01), Mitchell et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4885259 (1989-12-01), Osinski et al.
patent: 5021848 (1991-06-01), Chiu
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5208174 (1993-05-01), Mori
patent: 5210047 (1993-05-01), Woo et al.
patent: 5229311 (1993-07-01), Lai et al.

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