Thyristor having low on-state voltage with low areal doping emit

Details Thyristor having low on-state voltage with low areal doping emit Thyristor having low on-state voltage with low areal doping emit

1976-08-20

1980-08-26

Clawson, Jr., Joseph E.

357 30, 357 59, 357 86, 357 89, 357 90, H01L 2974

Patent

active

042198321

ABSTRACT:
A thyristor comprising a four-layer semiconductor substrate of PNPN structure in which the sum of the thicknesses in the layered direction of the intermediate P-type and N-type layers is less than 400.mu., and the amount of impurities per unit area of either one of the outer P-type and N-type layers is less than 3.times.10.sup.14 atoms/cm.sup.2.

REFERENCES:
patent: 3231796 (1966-01-01), Shombert
patent: 3349299 (1967-10-01), Herlet
patent: 3487276 (1969-12-01), Wolley
patent: 3893153 (1975-07-01), Page et al.
patent: 3967981 (1976-07-01), Yamazaki
patent: 3990091 (1976-11-01), Cresswell et al.

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