Fabrication process for photodiodes responsive to blue light

Details Fabrication process for photodiodes responsive to blue light Fabrication process for photodiodes responsive to blue light

1989-03-13

1990-11-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 20, H01L 3118

Patent

active

049686348

ABSTRACT:
A method is provided for the fabrication of a photodiode sensitive to blue light. This photodiode has a very flat pn junction (2) in order to achieve a high blue sensitivity. The pn-junction (2) is formed in an n-conducting (100)-oriented silicon monocrystal (1) through implantation of B.sup.+ ions. Subsequently, an upper layer (3) generated during the implantation with relatively low p-doping is eroded through anisotropic etching to extend into a region of a deeper lying layer (4) having a relatively high p.sup.+ -doping. This high p.sup.+ -doping layer is then located to provide high sensitivity of the silicon photodiodes light corresponding to blue in the visual spectrum.

REFERENCES:
patent: 4104085 (1978-08-01), Zandveld
patent: 4107722 (1978-08-01), Chamberlin
patent: 4141756 (1979-02-01), Chiang et al.
IEEE Trans. on Nuclear Science, vol. NS-29, No. 1, Feb. 1982, pp. 733-737.
Review of Scientific Instr., vol. 51, No. 9, Sep. 1980, pp. 1212-1216.
Nuclear Instr. & Methods in Physics Research, vol. A-235, No. 2, Apr. 1985, pp. 249-253.
Jour. of the Electrochemical Society, vol. 131, No. 1, Jan. 1984, pp. 161-171.

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