Semiconductor photoelectron emission device

Details Semiconductor photoelectron emission device Semiconductor photoelectron emission device

1976-10-26

1978-02-21

Edlow, Martin H.

357 16, 357 17, 357 52, 357 61, H01L 2714, H01L 29161

Patent

active

040756548

ABSTRACT:
Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

REFERENCES:
patent: 3696262 (1972-10-01), Antypas
patent: 3814996 (1974-06-01), Enstrom

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