High-voltage semiconductor device

Details High-voltage semiconductor device High-voltage semiconductor device

1989-04-14

1992-10-13

James, Andrew J.

357 2311, 357 35, 357 51, H01L 2906, H01L 2978, H01L 2974

Patent

active

051555689

ABSTRACT:
A semiconductor-controlled rectifier provides an example of a semiconductor device having enhanced resistance to electrical breakdown upon application of high voltage in the forward blocking mode. Enhanced breakdown voltage of 20 percent or more is achieved by having one or more bands of relatively heavier doped semiconductor material within a lighter doped region between the electrical connections to the device. Such high conductivity regions provide termination of the electric field away from the location where electrical breakdown may commence, by shaping the electric field or the depletion region adjacent to the semiconductor junctions.

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patent: 4618872 (1986-10-01), Baliga
patent: 4825266 (1989-04-01), Whight
Muller et al., Device Electronics for IC'S, pp. 193-199 1986.

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