Semiconductor device having low source inductance

Details Semiconductor device having low source inductance Semiconductor device having low source inductance

1991-03-18

1992-10-13

Epps, Georgia Y.

357 231, H01L 2978

Patent

active

051555638

ABSTRACT:
A semiconductor device having a low source inductance are fabricated by having a maximum of two sources each in contact with a region which makes contact to a substrate or back side of the device. The back side source contact also allows the device to be mounted directly to a grounded heatsink.

REFERENCES:
patent: 4908682 (1990-03-01), Takahashi
Itoh et al., "Entremely High Efficient UHF Power MOSFET for Handy Transmitter", IEDM, 1983, pp. 95-97.

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