Semiconductor device equipped with a conductivity modulation MIS

Details Semiconductor device equipped with a conductivity modulation MIS Semiconductor device equipped with a conductivity modulation MIS

1991-02-13

1992-10-13

Hille, Rolf

357 38, 357 41, 357 51, H01L 2978

Patent

active

051555620

ABSTRACT:
A semiconductor device including a conductivity modulating MISFET comprising a conductvitiy modulation layer of a first conductive type, a base region of a second conductive type, a source region of the second conductive type in the base region, a gate electrode on an insulating layer on the base region, an injection region of the second conductive type, and a drain electrode coupled to the injection region and the conductivity modulation layer. Wherein, the semiconductor device has a one-side electrode structure and the drain electrode coupled to the conductivity modulation layer provides a resistance parallel to a parasitic diode between the injection region and the conductivity modulation layer sufficient to forward bias the parasitic diode.

REFERENCES:
patent: 4626879 (1986-12-01), Colak
patent: 4761679 (1988-08-01), Stupp
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 4901131 (1990-02-01), Takahashi
patent: 4912541 (1990-03-01), Baliga et al.
patent: 4939566 (1990-07-01), Singer et al.
patent: 4980743 (1990-12-01), Nakagawa et al.
patent: 4989058 (1991-01-01), Colak et al.
patent: 5023678 (1991-06-01), Kinzer

Affiliated with

Also associated with

Rating

Semiconductor device equipped with a conductivity modulation MIS does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device equipped with a conductivity modulation MIS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device equipped with a conductivity modulation MIS will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1304862