Self-aligning contact and interconnect structure

Details Self-aligning contact and interconnect structure Self-aligning contact and interconnect structure

1992-09-28

1996-01-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257401, 257773, 257776, 257903, H01L 2348, H01L 2702

Patent

active

054831040

ABSTRACT:
An MOS transistor for use in an integrated circuit is fabricated with a self-aligning contact and interconnect structure which allows for higher packing density. Self-aligning source and drain contacts overlap the gate but are prevented from a short circuiting to the gate by oxide insulation between the source/drain contacts and the gate, and a layer of silicon nitride above the gate. Contacts to the gate are made on top of the gate over the active region of the transistor because the source and drain regions are protected by a hardened layer of photoresist during etching of insulation to expose the gate contact. Source, drain and gate contacts are protected by a layer of titanium silicide so that interconnects are not required to completely cover these areas. Low resistance interconnects are formed of doped polysilicon covered by titanium silicide encapsulated by a thin film of titanium nitride.

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