Method for fabricating a bipolar power transistor

Details Method for fabricating a bipolar power transistor Method for fabricating a bipolar power transistor

1995-04-14

1996-01-09

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 35, 437162, 437203, 148DIG10, H01L 218222

Patent

active

054828732

ABSTRACT:
A method for fabricating a bipolar power transistor is disclosed, wherein the bipolar power transistor is made on a first type of heavily doped substrate. The method comprises the following steps of: sequentially forming a first type of doped layer, a first type of lightly doped layer, a second type of lightly doped layer, a second type of doped layer and a barrier layer on the first type of heavily doped substrate; forming an opening on a predetermined position of the barrier layer; using the barrier layer as a mask, then a first type of dopant being doped into the second type of doped layer by the opening and being driven in to form a first type of heavily doped region under the barrier layer; forming a recession thereon which extends to the second type of lightly doped layer through the second type of doped layer; doping a first type of dopant into the second type of doped layer and the second type of lightly doped layer in the recession to form a first type of doped region which surrounds the recession and is adjacent to the first type of heavily doped region; and forming a conductive layer in the recession, and doping a first type of dopant into the conductive layer, thereby the first type of dopant is diffused in the first type of heavily doped region and the first type of doped region to form a first type of diffused region.

REFERENCES:
patent: 4415371 (1983-11-01), Soclof
patent: 4980302 (1990-12-01), Shimizu
patent: 5426059 (1995-06-01), Queyssac

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