Solid-state imaging device with improved photodetector

Details Solid-state imaging device with improved photodetector Solid-state imaging device with improved photodetector

1991-12-20

1993-03-02

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, H01L 2978, H01L 2714, H01L 3100

Patent

active

051913992

ABSTRACT:
A solid-state imaging device includes a photodetector having a first conductivity type semiconductor layer, a second conductivity type semiconductor region in the layer, and a first conductivity type region in the second conductivity type region. The second conductivity type semiconductor region includes second conductivity type subregions having different dopant impurity concentrations. The subregion which contacts the first conductivity type region has a dopant impurity concentration higher than the second conductivity type subregion. The device reads out photogenerated charges stored in the second conductivity type region as a light signal. The junction capacitances between the second conductivity type semiconductor region and the first conductivity type layer and the first conductivity type region are increased so that the maximum quantity of stored charge when the first conductivity type region is depleted is increased without a change in the potential. In addition, the sensitivity of the imaging device is not reduced.

REFERENCES:
patent: 4484210 (1984-11-01), Shiraki et al.
patent: 4672455 (1987-06-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake
patent: 5043783 (1991-08-01), Matsumoto et al.
Teranishi et al., "No Image Lag Photodiode Structure In The Interline CCD Image Sensor", International Electron Devices Meeting, 1982, sponsored by Electron Devices Society of IEEE, San Francisco, Calif. pp. 324-327.

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