Process for making a semiconductor varistor embodying a lamellar

Details Process for making a semiconductor varistor embodying a lamellar Process for making a semiconductor varistor embodying a lamellar

1974-11-29

1976-05-11

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148177, 148179, 252 623GA, 252 623E, 357 76, H01L 734, H01L 700

Patent

active

039560244

ABSTRACT:
A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of metal by a temperature gradient zone melting process to form a plurality of alternate regions of opposite type conductivity in a substrate and a P-N junction at the contiguous surfaces of each pair of regions of opposite type conductivity. The material of the regions formed by the migrated wires is recrystallized semiconductor material of the body suitably doped to form a selected type conductivity and resistivity.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3205101 (1965-09-01), Mlavsky et al.
patent: 3484302 (1969-12-01), Maeda et al.
patent: 3503125 (1970-03-01), Haberecht

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